Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cm

Ge Wafer Specification

• Growing Method:              CZ
• Orientation:                    (100) +/_0.5 Deg.
• Wafer Size:                      1" dia x  500 microns  
• Surface Polishing:           one side epi polished
• Surface roughness:         RMS or Ra:~ 10 A(By AFM)
• Doping:                          Undoped
• Conductor type:              N-type
• Resistivity:                    >50 Ohms/cm (If you would like to measure the resistivity accurately, 
                                      please order our Portable 4 Probe Resistivity Testing Instrument.) 
• Package:                         under 1000 class clean room      

Typical Properties:

• Structure:                       Cubic, a = 5.6754 A
• Density:                           5.323 g/cm3 at room temperature
• Melting Point:                  937.4 ^oC
• Thermal Conductivity:     640