Economic MIST CVD Furnace (1200°C Max. ) for Crystal Growth- OTF-1200X-S-Mist
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Economic MIST CVD Furnace (1200°C Max. ) for Crystal Growth- OTF-1200X-S-Mist

Economic MIST CVD Furnace (1200°C Max. ) for Crystal Growth- OTF-1200X-S-Mist

$7,904.75

Original: $22,585.00

-65%
Economic MIST CVD Furnace (1200°C Max. ) for Crystal Growth- OTF-1200X-S-Mist—

$22,585.00

$7,904.75

The Story

SPECIFICATIONS:

Features

 OTF-1200X-S-Mist is a compact and economic MIST CVD system, also called Aerosol-assisted chemical vapor deposition (AACVD),  for epitaxial thin film or single crystal growth up to 1200ºC. The furnace is integrated with a 1.7MHz ultrasonic mist generator and 2 2-channel gas delivery system

Furnace
  • The splittable tube furnace with 1200oC Max. working temperature 
  • 200 mm length heating zone with 60 mm length constant temperature zone.
  • 30 segments programmable temperature controller with +/- 1ºC accuracy
  • Power: 1.2 KW, 120VAC ( +/- 10% single phase 50/60Hz
  • Click the picture left to see detailed specs

Quartz Tube & Sample Holder

     
  • Quartz processing tube with flanges and the size of OD 60 mm x ID 55 mm x L 600 mm is included
  • One quartz sample holder is included, which can hold 4 pcs of 10x10x0.5 mm substrate at 45 degrees.
  • Click the Picture left to order a spare

Ultrasonic Mist Generator
  •  1.7 MHz ultrasonic generator is located in an airtight SS316 tank. ( click Pic left for specs )
    • 3 levels of power output ( low = "1", liquid injection speed = 0.2 mL/min), (middle = "2", liquid injection speed = 0.4 mL/min), (high ="3", liquid injection speed = 0.6 mL/min). To achieve high atomizing quality, the syringe pump rate should be match the power output level. 
    • 7 levels of time setting ("Out" indicator light), "1" = no limited timing, "2" = 30 min, "3"= 60 min, "4"= 90 min, "5"= 120 min, "6"= 150 min, "7" = 180 min
  • A liquid syringe pump is equipped to inject automatically, which comes with a 20 ml plastic syringe. The speed range for the liquid injection pump is 0.004 ml/min - 70 ml/min
  • The temperature heating function is additionally installed upon request. The max. temperature can be up to 250 °C
  • The mist generator is connected to a tube furnace via 1/4" stainless steel tube

Gas Delivery System
  • Two floating Flow-meter with a flow rate ranging from 16 to 160 mL/min
  • One stainless steel mix tank built inside for better gas mixing
  • Three Pipe fittings for 1/4" pipe (nylon or stainless steel)
  • Three vacuum needle valves made of SS304

Vacuum Pump ( optional )
  • KF 25 vacuum port is installed on the flange of the processing tube with a valve to connect to a vacuum pump
  • A dry pump is strongly recommended for the longer service life of Mist CVD.
  • Please click the picture left to order a pump if you need
Application
This kind of mist CVD can be used to grow Ga2O3 crystal with high quality

Compliance
  • CE Certified
  • NRTL or CSA certification is available at extra cost.
Reference article
  • EPITAXIAL GROWTH OF Γ-GA2O3 FILMS BY MIST CHEMICAL VAPOR DEPOSITION
  • Ga(acac)3 - [CH3COCH=C(O-)CH3]3Ga - Gallium(III) acetylacetonate
  • MgAlO4 substrate

 

Economic MIST CVD Furnace (1200°C Max. ) for Crystal Growth- OTF-1200X-S-Mist - Image 2

Details & Craftsmanship

Every detail has been carefully considered to bring you the perfect product.

Description

SPECIFICATIONS:

Features

 OTF-1200X-S-Mist is a compact and economic MIST CVD system, also called Aerosol-assisted chemical vapor deposition (AACVD),  for epitaxial thin film or single crystal growth up to 1200ºC. The furnace is integrated with a 1.7MHz ultrasonic mist generator and 2 2-channel gas delivery system

Furnace
  • The splittable tube furnace with 1200oC Max. working temperature 
  • 200 mm length heating zone with 60 mm length constant temperature zone.
  • 30 segments programmable temperature controller with +/- 1ºC accuracy
  • Power: 1.2 KW, 120VAC ( +/- 10% single phase 50/60Hz
  • Click the picture left to see detailed specs

Quartz Tube & Sample Holder

     
  • Quartz processing tube with flanges and the size of OD 60 mm x ID 55 mm x L 600 mm is included
  • One quartz sample holder is included, which can hold 4 pcs of 10x10x0.5 mm substrate at 45 degrees.
  • Click the Picture left to order a spare

Ultrasonic Mist Generator
  •  1.7 MHz ultrasonic generator is located in an airtight SS316 tank. ( click Pic left for specs )
    • 3 levels of power output ( low = "1", liquid injection speed = 0.2 mL/min), (middle = "2", liquid injection speed = 0.4 mL/min), (high ="3", liquid injection speed = 0.6 mL/min). To achieve high atomizing quality, the syringe pump rate should be match the power output level. 
    • 7 levels of time setting ("Out" indicator light), "1" = no limited timing, "2" = 30 min, "3"= 60 min, "4"= 90 min, "5"= 120 min, "6"= 150 min, "7" = 180 min
  • A liquid syringe pump is equipped to inject automatically, which comes with a 20 ml plastic syringe. The speed range for the liquid injection pump is 0.004 ml/min - 70 ml/min
  • The temperature heating function is additionally installed upon request. The max. temperature can be up to 250 °C
  • The mist generator is connected to a tube furnace via 1/4" stainless steel tube

Gas Delivery System
  • Two floating Flow-meter with a flow rate ranging from 16 to 160 mL/min
  • One stainless steel mix tank built inside for better gas mixing
  • Three Pipe fittings for 1/4" pipe (nylon or stainless steel)
  • Three vacuum needle valves made of SS304

Vacuum Pump ( optional )
  • KF 25 vacuum port is installed on the flange of the processing tube with a valve to connect to a vacuum pump
  • A dry pump is strongly recommended for the longer service life of Mist CVD.
  • Please click the picture left to order a pump if you need
Application
This kind of mist CVD can be used to grow Ga2O3 crystal with high quality

Compliance
  • CE Certified
  • NRTL or CSA certification is available at extra cost.
Reference article
  • EPITAXIAL GROWTH OF Γ-GA2O3 FILMS BY MIST CHEMICAL VAPOR DEPOSITION
  • Ga(acac)3 - [CH3COCH=C(O-)CH3]3Ga - Gallium(III) acetylacetonate
  • MgAlO4 substrate