$109.95
Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, P-type ,B-doped 1SP R:0.001- 0.005 ohm.cm—
$109.95

The Story


Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on 4" Silicon wafer
  • Oxide layer thickness: 100 nm   ( 2000A)  +/-10%
  • Refractive index - 1.455
  • Conductive type:          P-ype/ B-dped 
  • Resistivity:                0.001- 0.005 ohm.cm
  • Size:                         4" +/- 0.5 mm x 0.5 mm
  • Orientation:                (100) +/- 1o
  • Polish:                        one side polished
  • Surface roughness:      < 5A

  • Optional:  you may need tool below to handle the wafer ( click picture to order )

    Diamond Scriber for Cutting Single Crystal Substrate - DS-01

    Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001

    Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C

    Single Wafer Containers

Description


Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on 4" Silicon wafer
  • Oxide layer thickness: 100 nm   ( 2000A)  +/-10%
  • Refractive index - 1.455
  • Conductive type:          P-ype/ B-dped 
  • Resistivity:                0.001- 0.005 ohm.cm
  • Size:                         4" +/- 0.5 mm x 0.5 mm
  • Orientation:                (100) +/- 1o
  • Polish:                        one side polished
  • Surface roughness:      < 5A

  • Optional:  you may need tool below to handle the wafer ( click picture to order )

    Diamond Scriber for Cutting Single Crystal Substrate - DS-01

    Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001

    Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C

    Single Wafer Containers