Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1US

Thermal oxide 

• SiO2 layer on 4" Silicon wafer
• Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
• Refractive index - 1.455

Silicon Wafer Specifications:

• Conductive type:          P-type/ B-dped 
• Resistivity:                 1-10 ohm.cm  (If you would like to measure the resistivity accurately, 
                                    please order our Portable 4 Probe Resistivity Testing Instrument.) 
• Size:                         4" +/- 0.5 mm x 0.5 mm
• Orientation:                (100) +/- 1^o
• Polish:                        Two sides  polished
• Surface roughness, Ra: < 5A (RMS)

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