$799.00
GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5—
$799.00
The Story
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 4" dia x 0.625 mm
- Polishing: two sides polished
- Doping: Si doped
- Conductor type: S-C-N
- Carrier Concentration: (1.47-3.78) x 10^18/cm^3
- Mobility: (1600 - 2130) cm^2/V.S
- Resistivity: (1.03 - 2.01) E-3 ohm.cm
- EPD: < 5000cm^2
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 4" dia x 0.625 mm
- Polishing: two sides polished
- Doping: Si doped
- Conductor type: S-C-N
- Carrier Concentration: (1.47-3.78) x 10^18/cm^3
- Mobility: (1600 - 2130) cm^2/V.S
- Resistivity: (1.03 - 2.01) E-3 ohm.cm
- EPD: < 5000cm^2
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
