GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp
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GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp

GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp

$659.00
GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp—
$659.00

The Story

GaAs single crystal wafer
Growing Method:              VGF
Orientation:                      (100)
Size:                               3" dia x 0.5mm
Polishing:                         one side polished
Doping:                            Zn doped
Conductor type:                S-C-P
Carrier Concentration:        (5.01-6.30) x 10^17 /cm^3
Mobility:                          184-200cm^2/V.S
EPD:                               <5000/cm^2
resistivity:                         (5.14-6.67)x10^-2 ohm.cm
Ra(Average Roughness) :  < 0.4 nm
Note: EPI ready wafers


Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces

Description

GaAs single crystal wafer
Growing Method:              VGF
Orientation:                      (100)
Size:                               3" dia x 0.5mm
Polishing:                         one side polished
Doping:                            Zn doped
Conductor type:                S-C-P
Carrier Concentration:        (5.01-6.30) x 10^17 /cm^3
Mobility:                          184-200cm^2/V.S
EPD:                               <5000/cm^2
resistivity:                         (5.14-6.67)x10^-2 ohm.cm
Ra(Average Roughness) :  < 0.4 nm
Note: EPI ready wafers


Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces

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