GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3
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GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3

GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3

$204.75

Original: $585.00

-65%
GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3—

$585.00

$204.75

The Story

GaAs single crystal wafer
Growing Method:               VGF
Orientation:                       (100)
Size:                                 2" dia x 0.35mm
Polishing:                          one side polished
Doping:                             Zn doped
Conductor type:                 S-C-P
Carrier Concentration:         (2.67-3.27) x 10^18 /cm^3

Mobility:                           116-125 cm^2/V.S

EPD:                                <5000/cm^2

Resistivity:                        (1.64-1.88)x10^-2 ohm.cm

Ra(Average Roughness) :   < 0.4 nm

Note: EPI ready wafers

Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces


Description

GaAs single crystal wafer
Growing Method:               VGF
Orientation:                       (100)
Size:                                 2" dia x 0.35mm
Polishing:                          one side polished
Doping:                             Zn doped
Conductor type:                 S-C-P
Carrier Concentration:         (2.67-3.27) x 10^18 /cm^3

Mobility:                           116-125 cm^2/V.S

EPD:                                <5000/cm^2

Resistivity:                        (1.64-1.88)x10^-2 ohm.cm

Ra(Average Roughness) :   < 0.4 nm

Note: EPI ready wafers

Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces


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