Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 2SP,R>50ohm.cm - GEUe101D05C2R50US

Ge Wafer Specification

• Growing Method:            CZ
• Orientation:                    (110) +/-0.5 Deg.
• Wafer Size:                    4" dia x  500 microns  
• Surface Polishing:          two sides epi polished
• Surface roughness:         < 30 A ( by AFM)
• Doping:                         Undoped
• Conductor type:             N-type
• Resistivity:                  >50  Ohms/cm (If you would like to measure the resistivity accurately, 
                                     please order our Portable 4 Probe Resistivity Testing Instrument.)
  Package:                      under 1000 class clean room        

Typical Properties of Ge Crystal

• Structure:                     Cubic, a = 5.6754 Å
• Density:                        5.323 g/cm3 at room temperature
• Melting Point:                937.4 ^oC
• Thermal Conductivity:     640