$769.00
Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US—
$769.00
The Story
Ge Wafer Specification
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Growing Method: CZ
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Orientation: (100) +/-0.5 Deg.
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Wafer Size: 3" dia x 0.5 mm
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Surface Polishing: one side optical polished
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Surface finish (RMS or Ra) : < 30A
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Doping: Undoped
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Conductor type: N-type
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Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) -
Package: under 1000 class clean room in wafer container
Related Product
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Description
Ge Wafer Specification
-
Growing Method: CZ
-
Orientation: (100) +/-0.5 Deg.
-
Wafer Size: 3" dia x 0.5 mm
-
Surface Polishing: one side optical polished
-
Surface finish (RMS or Ra) : < 30A
-
Doping: Undoped
-
Conductor type: N-type
-
Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) -
Package: under 1000 class clean room in wafer container
Related Product
Other Crystal wafer A-Z
Plasma Cleaner
Wafer Containers
Dicing saw
Film Coater
