InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished - IAZna50D05C1US5
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InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished - IAZna50D05C1US5

InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished - IAZna50D05C1US5

$488.25

Original: $1,395.00

-65%
InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished - IAZna50D05C1US5—

$1,395.00

$488.25

The Story

2" InAs wafer (P type)

  • 2" InAs wafer    
  • P Type, Zn doped
  • Size:                     2" dia x0. 5 mm +/-20 microns
  • Orientation:          <100> +/-0.50
  •  Polishing:             one-side polishd
  • Packing:                 in 1000 class clean room with wafer container

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5 o
  • Orientation Flat                                                 <110> <-110>                    
  • Doping                                                                Zn doped
  • Conductivity type                                               P type
  • Carrier Concentration                                        (3-7)E17/ cm3
  • Mobility                                                              100-500 cm2/V.S  
  • EPD                                                                  <10000 / cm 2

 

Related Product

Other InAs

 		InSb

 InP 

 GaAs


 GaSb



 Wafer Box

 Film Coater

 RTP Furnaces

Description

2" InAs wafer (P type)

  • 2" InAs wafer    
  • P Type, Zn doped
  • Size:                     2" dia x0. 5 mm +/-20 microns
  • Orientation:          <100> +/-0.50
  •  Polishing:             one-side polishd
  • Packing:                 in 1000 class clean room with wafer container

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5 o
  • Orientation Flat                                                 <110> <-110>                    
  • Doping                                                                Zn doped
  • Conductivity type                                               P type
  • Carrier Concentration                                        (3-7)E17/ cm3
  • Mobility                                                              100-500 cm2/V.S  
  • EPD                                                                  <10000 / cm 2

 

Related Product

Other InAs

 		InSb

 InP 

 GaAs


 GaSb



 Wafer Box

 Film Coater

 RTP Furnaces

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