InAs (111)A, N type, undoped, 2" in dia x 0.45mm, 1sp
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InAs (111)A, N type, undoped, 2" in dia x 0.45mm, 1sp

InAs (111)A, N type, undoped, 2" in dia x 0.45mm, 1sp

$348.25

Original: $995.00

-65%
InAs (111)A, N type, undoped, 2" in dia x 0.45mm, 1sp—

$995.00

$348.25

The Story

  •                         Growth method                                     LEC
  •                         Orientation                                            (111)A  ± 0.5  Deg
  •                         Orientation Flat                                     SEMI       
  •                         Doping                                                  Undoped
  •                         Conductivity type                                   N type
  •                         Carrier Concentration                           <2E16 / cm-3
  •                         Mobility                                                >23400 cm2/V.S  
  •                         EPD                                                     <10000 / cm 2
  •                         Resistivity:                              1.3x10^-2 ohm.cm
  •                         Standard thickness                                 450 ± 25 mm
  •                                 Standard diameter                               2"± 0.4mm
  •                         Polish                                                   one-side


Related Product

Other InAs

 		InSb

 InP 

 GaAs


 GaSb



 Wafer Box

 Film Coater

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Description

  •                         Growth method                                     LEC
  •                         Orientation                                            (111)A  ± 0.5  Deg
  •                         Orientation Flat                                     SEMI       
  •                         Doping                                                  Undoped
  •                         Conductivity type                                   N type
  •                         Carrier Concentration                           <2E16 / cm-3
  •                         Mobility                                                >23400 cm2/V.S  
  •                         EPD                                                     <10000 / cm 2
  •                         Resistivity:                              1.3x10^-2 ohm.cm
  •                         Standard thickness                                 450 ± 25 mm
  •                                 Standard diameter                               2"± 0.4mm
  •                         Polish                                                   one-side


Related Product

Other InAs

 		InSb

 InP 

 GaAs


 GaSb



 Wafer Box

 Film Coater

 RTP Furnaces