$66.15
Original: $189.00
-65%InAs (111)A, P Type, Zn doped 10x10 x 0.45 mm, one side polished—
$189.00
$66.15The Story
2" InAs wafer (P type)
- 2" InAs wafer
- P Type, Zn doped
- Size: 10x10x0.45 mm +/-20 microns
- Orientation: <111>A
- Polishing: one-side polishd
- Resistivities: 5.1x10^-2 ohm-cm
- Packing: in 1000 class clean room with wafer container
Properties
- Growth method LEC
- Orientation (111) A
- Orientation Flat SEMI
- Doping Zn doped
- Conductivity type P type
- Carrier Concentration 6.4E17/ cm3
- Mobility 192 cm2/V.S
- Resistivity 5.1x10^-2 Ohm-Cm
- EPD 1.9E4 / cm 2
Related Product
Other InAs
|
InSb
|
InP
|
GaAs |
GaSb |
Wafer Box
|
Film Coater
|
RTP Furnaces
|
Description
2" InAs wafer (P type)
- 2" InAs wafer
- P Type, Zn doped
- Size: 10x10x0.45 mm +/-20 microns
- Orientation: <111>A
- Polishing: one-side polishd
- Resistivities: 5.1x10^-2 ohm-cm
- Packing: in 1000 class clean room with wafer container
Properties
- Growth method LEC
- Orientation (111) A
- Orientation Flat SEMI
- Doping Zn doped
- Conductivity type P type
- Carrier Concentration 6.4E17/ cm3
- Mobility 192 cm2/V.S
- Resistivity 5.1x10^-2 Ohm-Cm
- EPD 1.9E4 / cm 2
Related Product
| Other InAs
|
InSb
|
InP
|
GaAs |
GaSb |
Wafer Box
|
Film Coater
|
RTP Furnaces
|
