$488.25
Original: $1,395.00
-65%InP-(VGF- Grown) (100) Sn doped, 2"x0.35mm wafer, 1sp—
$1,395.00
$488.25The Story
InP single crystal wafer
Growing Method: VGF
Orientation: (100)
Size: 2" diameter x 0.35 mm
Doping: Sn- doped
Conducting type: S-C-N
Polish: one side polished
Resistivity: (2.82-2.99)x10^-3 ohm.cm
Mobility: 2170-2220 cmE2/V.S
EPD: <5000 /cmE2
Carrier Concerntration: (9.62-9.99) x10^17 /cm^3
Ra(Average Roughness) : < 0.4 nm
Orientation: (100)
Size: 2" diameter x 0.35 mm
Doping: Sn- doped
Conducting type: S-C-N
Polish: one side polished
Resistivity: (2.82-2.99)x10^-3 ohm.cm
Mobility: 2170-2220 cmE2/V.S
EPD: <5000 /cmE2
Carrier Concerntration: (9.62-9.99) x10^17 /cm^3
Ra(Average Roughness) : < 0.4 nm
EPI ready surface and packing
Description
InP single crystal wafer
Growing Method: VGF
Orientation: (100)
Size: 2" diameter x 0.35 mm
Doping: Sn- doped
Conducting type: S-C-N
Polish: one side polished
Resistivity: (2.82-2.99)x10^-3 ohm.cm
Mobility: 2170-2220 cmE2/V.S
EPD: <5000 /cmE2
Carrier Concerntration: (9.62-9.99) x10^17 /cm^3
Ra(Average Roughness) : < 0.4 nm
Orientation: (100)
Size: 2" diameter x 0.35 mm
Doping: Sn- doped
Conducting type: S-C-N
Polish: one side polished
Resistivity: (2.82-2.99)x10^-3 ohm.cm
Mobility: 2170-2220 cmE2/V.S
EPD: <5000 /cmE2
Carrier Concerntration: (9.62-9.99) x10^17 /cm^3
Ra(Average Roughness) : < 0.4 nm
EPI ready surface and packing
