
The Story
InP single crystal wafer
Orientation: (100)
Size: 2" diameter x 0.35 mm
Doping: Undoped
Conducting type: S-C
Polish: one side polished
Resistivity: (2.59-3.8) x 10^-1 ohm.cm
Mobility: (4100-4350) cm^2/V.S
EPD: <5000 /cm^2
Carrier Concentration: (3.78-5.59) x 10^15 /cmE-3
EPI ready surface and packing
Description
InP single crystal wafer
Orientation: (100)
Size: 2" diameter x 0.35 mm
Doping: Undoped
Conducting type: S-C
Polish: one side polished
Resistivity: (2.59-3.8) x 10^-1 ohm.cm
Mobility: (4100-4350) cm^2/V.S
EPD: <5000 /cm^2
Carrier Concentration: (3.78-5.59) x 10^15 /cmE-3
EPI ready surface and packing












